Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/32215
Title: Majority carrier capture cross section determination in the large deep trap concentration cases
Author: Morante i Lleonart, Joan Ramon
Samitier i Martí, Josep
Cornet i Calveras, Albert
Herms Berenguer, Atilà
Cartujo Estébanez, Pedro
Keywords: Materials
Estructura electrònica
Matèria condensada
Materials
Electronic structure
Condensed matter
Issue Date: 1986
Publisher: American Institute of Physics
Abstract: A method to determine the thermal cross section of a deep level from capacitance measurements is reported. The results enable us to explain the nonexponential behavior of the capacitance versus capture time when the trap concentration is not negligible with respect to that of the shallow one, and the Debye tail effects are taken into account. A figure of merit for the nonexponential behavior of the capture process is shown and discussed for different situations of doping and applied bias. We have also considered the influence of the position of the trap level"s energy on the nonexponentiality of the capture transient. The experimental results are given for the gold acceptor level in silicon and for the DX center in Al0.55 Ga0.45As, which are in good agreement with the developed theory.
Note: Reproducció del document publicat a: http://dx.doi.org/10.1063/1.336465
It is part of: Journal of Applied Physics, 1986, vol. 59, num. 5, p. 1562-1569
Related resource: http://dx.doi.org/10.1063/1.336465
URI: http://hdl.handle.net/2445/32215
ISSN: 0021-8979
Appears in Collections:Articles publicats en revistes (Electrònica)

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