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Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/32219
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dc.contributor.authorPeiró Martínez, Francisca-
dc.contributor.authorCornet i Calveras, Albert-
dc.contributor.authorMorante i Lleonart, Joan Ramon-
dc.contributor.authorClark, S. A.-
dc.contributor.authorWilliams, R. H.-
dc.date.accessioned2012-10-08T12:08:11Z-
dc.date.available2012-10-08T12:08:11Z-
dc.date.issued1992-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/2445/32219-
dc.description.abstractTransmission electron microscopy studies have been performed to characterize InxAl1−xAs layers grown by molecular beam epitaxy on (100) InP substrates. The first observations of compositional nonuniformities in strained InAlAs layers are reported. The coarse quasiperiodic structure present in each sample has been found to be dependent upon the growth parameters and the sample characteristics.-
dc.format.extent3 p.-
dc.format.mimetypeapplication/pdf-
dc.language.isoeng-
dc.publisherAmerican Institute of Physics-
dc.relation.isformatofReproducció del document publicat a: http://dx.doi.org/10.1063/1.351083-
dc.relation.ispartofJournal of Applied Physics, 1992, vol. 71, num. 5, p. 2470-2472-
dc.relation.urihttp://dx.doi.org/10.1063/1.351083-
dc.rights(c) American Institute of Physics , 1992-
dc.sourceArticles publicats en revistes (Enginyeria Electrònica i Biomèdica)-
dc.subject.classificationMicroscòpia electrònica-
dc.subject.classificationPel·lícules fines-
dc.subject.classificationFeixos moleculars-
dc.subject.otherElectron microscopy-
dc.subject.otherThin films-
dc.subject.otherMolecular beams-
dc.titleAlloy inhomogeneities in InAlAs strained layers grown by MBEeng
dc.typeinfo:eu-repo/semantics/article-
dc.typeinfo:eu-repo/semantics/publishedVersion-
dc.identifier.idgrec061619-
dc.date.updated2012-10-08T12:08:11Z-
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess-
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