Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/32220
Title: Raman scattering and photoluminescence analysis of silicon on insulator structures obtained by single and multiple oxygen implants
Author: Pérez Rodríguez, Alejandro
Cornet i Calveras, Albert
Morante i Lleonart, Joan Ramon
Jiménez, J.
Hemment, Peter L. F.
Homewood, K. P.
Keywords: Pel·lícules fines
Estructura electrònica
Nanoestructures
Thin films
Electronic structure
Nanostructures
Issue Date: 1991
Publisher: American Institute of Physics
Abstract: An analysis of silicon on insulator structures obtained by single and multiple implants by means of Raman scattering and photoluminescence spectroscopy is reported. The Raman spectra obtained with different excitation powers and wavelengths indicate the presence of a tensile strain in the top silicon layer of the structures. The comparison between the spectra measured in both kinds of samples points out the existence in the multiple implant material of a lower strain for a penetration depth about 300 nm and a higher strain for higher penetration depths. These results have been correlated with transmission electron microscopy observations, which have allowed to associate the higher strain to the presence of SiO2 precipitates in the top silicon layer, close to the buried oxide. The found lower strain is in agreement with the better quality expected for this material, which is corroborated by the photoluminescence data.
Note: Reproducció del document publicat a: http://dx.doi.org/10.1063/1.349536
It is part of: Journal of Applied Physics, 1991, vol. 70, num. 3, p. 1678-1683
Related resource: http://dx.doi.org/10.1063/1.349536
URI: http://hdl.handle.net/2445/32220
ISSN: 0021-8979
Appears in Collections:Articles publicats en revistes (Electrònica)

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