Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/32221
Title: Anomalous optical and electrical recovery process of photoquenched EL2 defect produced by oxygen and boron ion implantation in gallium arsenide
Author: Samitier i Martí, Josep
Marco Colás, Santiago
Pérez Rodríguez, Alejandro
Morante i Lleonart, Joan Ramon
Boher, P.
Renaud, M.
Keywords: Materials nanoestructurals
Estructura electrònica
Nanostructured materials
Electronic structure
Issue Date: 1992
Publisher: American Institute of Physics
Abstract: The optical and electrical recovery processes of the metastable state of the EL2 defect artificially created in n‐type GaAs by boron or oxygen implantation are analyzed at 80 K using optical isothermal transient spectroscopy. In both cases, we have found an inhibition of the electrical recovery and the existence of an optical recovery in the range 1.1-1.4 eV, competing with the photoquenching effect. The similar results obtained with both elements and the different behavior observed in comparison with the native EL2 defect has been related to the network damage produced by the implantation process. From the different behavior with the technological process, it can be deduced that the electrical and optical anomalies have a different origin. The electrical inhibition is due to the existence of an interaction between the EL2 defect and other implantation‐created defects. However, the optical recovery seems to be related to a change in the microscopic metastable state configuration involving the presence of vacancies
Note: Reproducció del document publicat a: http://dx.doi.org/10.1063/1.350751
It is part of: Journal of Applied Physics, 1992, vol. 71, num. 1, p. 252-259
Related resource: http://dx.doi.org/10.1063/1.350751
URI: http://hdl.handle.net/2445/32221
ISSN: 0021-8979
Appears in Collections:Articles publicats en revistes (Electrònica)

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