Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/32223
Title: Ion-beam induced oxidation of GaAs and AlGaAs
Author: Alay, Josep Lluís
Bender, H.
Vandervorst, Wilfried
Keywords: Semiconductors
Microelectrònica
Espectroscòpia d'electrons
Semiconductors
Microelectronics
Electron spectroscopy
Issue Date: 1995
Publisher: American Institute of Physics
Abstract: The oxidation of GaAs and AlxGa1−xAs targets by oxygen irradiation has been studied in detail. It was found that the oxidation process is characterized by the strong preferential oxidation of Al as compared to Ga, and of Ga as compared to As. This experimental observation, which has been accurately quantified by using x‐ray photoelectron spectroscopy, is connected to the different heats of formation of the corresponding oxides. The oxide grown by ion beam oxidation shows a strong depletion in As and relatively low oxidation of As as well. The depletion can be associated with the preferential sputtering of the As oxide in respect to other compounds whereas the low oxidation is due to the low heat of formation. In contrast Al is rapidly and fully oxidized, turning the outermost layer of the altered layer to a single Al2O3 overlayer, as observed by transmission electron microscopy. The radiation enhanced diffusion of oxygen and aluminum in the altered layer explains the large thickness of these altered layers and the formation of Al oxides on top of the layers. For the case of ion‐beam oxidation of GaAs a simulation program has been developed which describes adequately the various growth mechanisms experimentally observed
Note: Reproducció del document publicat a: http://dx.doi.org/10.1063/1.358650
It is part of: Journal of Applied Physics, 1995, vol. 77, num. 7, p. 3010-3022
Related resource: http://dx.doi.org/10.1063/1.358650
URI: http://hdl.handle.net/2445/32223
ISSN: 0021-8979
Appears in Collections:Articles publicats en revistes (Història i Arqueologia)

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