Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/32224
Title: The valence band alignment at ultrathin SiO2/Si interfaces
Author: Alay, Josep Lluís
Hirose, M.
Keywords: Semiconductors
Interfícies (Ciències físiques)
Semiconductors
Interfaces (Physical sciences)
Issue Date: 1997
Publisher: American Institute of Physics
Abstract: High resolution x-ray photoelectron spectroscopy has been used to determine the valence band alignment at ultrathin SiO2/Si interfaces. In the oxide thickness range 1.6-4.4 nm the constant band-offset values of 4.49 and 4.43 eV have been obtained for the dry SiO2/Si(100) and the wet SiO2/Si(100) interfaces, respectively. The valence band alignment of dry SiO2/Si(111) (4.36 eV) is slightly smaller than the case of the dry SiO2/Si(100) interface.
Note: Reproducció del document publicat a: http://dx.doi.org/10.1063/1.363895
It is part of: Journal of Applied Physics, 1997, vol. 81, num. 3, p. 1606-1608
Related resource: http://dx.doi.org/10.1063/1.363895
URI: http://hdl.handle.net/2445/32224
ISSN: 0021-8979
Appears in Collections:Articles publicats en revistes (Història i Arqueologia)

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