Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/32231
Title: Electron tunneling in heavily In-doped polycrystalline CdS films
Author: García-Cuenca Varona, María Victoria
Morenza Gil, José Luis
Esteve Pujol, Joan
Keywords: Pel·lícules fines
Estructura electrònica
Thin films
Electronic structure
Issue Date: 1984
Publisher: American Institute of Physics
Abstract: The electrical properties of heavily In‐doped polycrystalline CdS films have been studied as a function of the doping level. The films were prepared by vacuum coevaporation of CdS and In. Conductivity and Hall measurements were performed over the temperature range 77-400 K. The conductivity decreases weakly with the temperature and shows a tendency towards saturation at low temperatures. A simple relationship σ=σ0(1+βT2) is found in the low‐temperature range. The temperature dependence of the mobility is similar to that of the conductivity since the Hall coefficient is found to be a constant in the whole temperature range. We interpret the experimental results in terms of a modified version of grain‐boundary trapping Seto"s model, taking into account thermionic emission and tunneling of carriers through the potential barriers. The barriers are found to be high and narrow, and tunneling becomes the predominating transport mechanism.
Note: Reproducció del document publicat a: http://dx.doi.org/10.1063/1.334170
It is part of: Journal of Applied Physics, 1984, vol. 56, num. 6, p. 1738-1743
Related resource: http://dx.doi.org/10.1063/1.334170
URI: http://hdl.handle.net/2445/32231
ISSN: 0021-8979
Appears in Collections:Articles publicats en revistes (Física Aplicada)

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