Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/32238
Title: Internal stress and strain in heavily boron-doped diamond films grown by microwave plasma and hot filament chemical vapor deposition
Author: Wang, W. L.
Polo Trasancos, Ma. del Carmen
Sánchez, G.
Cifre, J.
Esteve Pujol, Joan
Keywords: Superfícies (Tecnologia)
Pel·lícules fines de diamant
Materials nanoestructurals
Surfaces (Technology
Diamond thin films
Nanostructured materials
Issue Date: 1996
Publisher: American Institute of Physics
Abstract: The internal stress and strain in boron‐doped diamond films grown by microwave plasma chemical vapor deposition (MWCVD) and hot filament CVD (HFCVD) were studied as a function of boron concentration. The total stress (thermal+intrinsic) was tensile, and the stress and strain increased with boron concentration. The stress and the strain measured in HFCVD samples were greater than those of MWCVD samples at the same boron concentration. The intrinsic tensile stress, 0.84 GPa, calculated by the grain boundary relaxation model, was in good agreement with the experimental value when the boron concentration in the films was below 0.3 at.%. At boron concentrations above 0.3 at.%, the tensile stress was mainly caused by high defect density, and induced by a node‐blocked sliding effect at the grain boundary
Note: Reproducció del document publicat a: http://dx.doi.org/10.1063/1.362996
It is part of: Journal of Applied Physics, 1996, vol. 80, num. 3, p. 1846-1850
Related resource: http://dx.doi.org/10.1063/1.362996
URI: http://hdl.handle.net/2445/32238
ISSN: 0021-8979
Appears in Collections:Articles publicats en revistes (Física Aplicada)

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