Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/32396
Title: Polarization strategies to improve the emission of a Si-based light source emitting at 1.55 um
Author: Ramírez Ramírez, Joan Manel
Jambois, Olivier
Berencén Ramírez, Yonder Antonio
Navarro Urrios, Daniel
Anopchenko, Aleksei
Marconi, A.
Prtljaga, Nikola
Daldosso, Nicola
Pavesi, Lorenzo
Colonna, J. P.
Fedeli, Jean-Marc
Garrido Fernández, Blas
Keywords: Nanocristalls semiconductors
Silici
Metall-òxid-semiconductors complementaris
Fotònica
Semiconductor nanocrystals
Silicon
Complementary metal oxide semiconductors
Photonics
Issue Date: 5-Dec-2011
Publisher: Elsevier B.V.
Abstract: We present a electroluminescence (EL) study of the Si-rich silicon oxide (SRSO) LEDs with and without Er3+ ions under different polarization schemes: direct current (DC) and pulsed voltage (PV). The power efficiency of the devices and their main optical limitations are presented. We show that under PV polarization scheme, the devices achieve one order of magnitude superior performance in comparison with DC. Time-resolved measurements have shown that this enhancement is met only for active layers in which annealing temperature is high enough (>1000 ◦C) for silicon nanocrystal (Si-nc) formation. Modeling of the system with rate equations has been done and excitation cross-sections for both Si-nc and Er3+ ions have been extracted.
Note: Versió postprint del document publicat a: http://dx.doi.org/10.1016/j.mseb.2011.12.023
It is part of: Materials Science and Engineering B-Solid State Materials for Advanced Technology, 2011, vol. 177, num. 10, p. 734-738
URI: http://hdl.handle.net/2445/32396
ISSN: 0921-5107
Appears in Collections:Articles publicats en revistes (Electrònica)
Publicacions de projectes de recerca finançats per la UE

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