Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/33659
Title: Highly textured Sr, Nb, co-doped BiFeO3 thin films grown on SrRuO3/Si substrates by rf-sputtering
Author: Ostos, C.
Raymond, Oscar
Suarez-Almodovar, N.
Bueno-Baqués, D.
Mestres i Vila, Ma. Lourdes
Siqueiros, J. M.
Keywords: Pel·lícules fines
Ferroelectricitat
Metall-òxid-semiconductors complementaris
Espintrònica
Niobi
Thin films
Ferroelectricity
Complementary metal oxide semiconductors
Spintronics
Niobium
Issue Date: 2011
Publisher: American Institute of Physics
Abstract: In this study, (011)-highly oriented Sr, Nb co-doped BiFeO3 (BFO) thin films were successfully grown on SrRuO3/Si substrates by rf-magnetron sputtering. The presence of parasite magnetic phases was ruled out based on the high resolution x-ray diffraction data. BFO films exhibited a columnar-like grain growth with rms surface roughness values of 5.3 nm and average grain sizes of 65-70 nm for samples with different thicknesses. Remanent polarization values (2Pr) of 54 lC cm 2 at room temperature were found for the BFO films with a ferroelectric behavior characteristic of an asymmetric device structure. Analysis of the leakage mechanisms for this structure in negative bias suggests Schottky injection and a dominant Poole-Frenkel trap-limited conduction at room temperature. Oxygen vacancies and Fe3þ/Fe2þ trap centers are consistent with the surface chemical bonding states analysis from x-ray photoelectron spectroscopy data. The (011)-BFO/ SrRuO3/Si film structure exhibits a strong magnetic interaction at the interface between the multiferroic film and the substrate layer where an enhanced ferromagnetic response at 5 K was observed. Zero-field cooled (ZFC) and field cooled (FC) magnetization curves of this film system revealed a possible spin glass behavior at spin freezing temperatures below 30 K depending on the BFO film thickness.
Note: Reproducció del document publicat a: https://doi.org/10.1063/1.3610428
It is part of: Journal of Applied Physics, 2011, vol. 110, p. 024114-1-024114-7
URI: http://hdl.handle.net/2445/33659
Related resource: https://doi.org/10.1063/1.3610428
ISSN: 0021-8979
Appears in Collections:Articles publicats en revistes (Química Inorgànica i Orgànica)

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