Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/33761
Title: Large Magnetoresistance in Fe/MgO/FeCo(001) Epitaxial Tunnel-Junctions on GaAs(001).
Author: Bowen, M.
Cros, V.
Petroff, F.
Fert, Albert, 1938-
Martínez Boubeta, José Carlos
Costa Krämer, José Luis
Anguita, José Virgilio
Cebollada, Alfonso
Briones Fernández-Pola, Fernando
Teresa, J. M. de
Morellon, L.
Ibarra, M. R.
Güell Vilà, Frank
Peiró Martínez, Francisca
Cornet i Calveras, Albert
Keywords: Magnetoresistència
Dispositius de memòria d'ordinador
Microelectrònica
Efecte túnel
Ferro
Magnetoresistance
Computer storage devices
Microelectronics
Tunneling (Physics)
Iron
Issue Date: 2001
Publisher: American Institute of Physics
Abstract: We present tunneling experiments on Fe~001!/MgO~20 Å!/FeCo~001! single-crystal epitaxial junctions of high quality grown by sputtering and laser ablation. Tunnel magnetoresistance measurements give 60% at 30 K, to be compared with 13% obtained recently on ~001!-oriented Fe/amorphous-Al2O3 /FeCo tunnel junctions. This difference demonstrates that the spin polarization of tunneling electrons is not directly related to the density of states of the free metal surface Fe~001! in this case but depends on the actual electronic structure of the entire electrode/barrier system.
Note: Reproducció del document publicat a: http://dx.doi.org/10.1063/1.1404125
It is part of: Applied Physics Letters, 2001, vol. 79, num. 11, p. 1655-1657
Related resource: http://dx.doi.org/10.1063/1.1404125
URI: http://hdl.handle.net/2445/33761
ISSN: 0003-6951
Appears in Collections:Articles publicats en revistes (Electrònica)

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