Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/34659
Title: New features of the layer-by-layer deposition of microcrystalline silicon films revealed by spectroscopic ellipsometry and high resolution transmission electron microscopy
Author: Roca i Cabarrocas, P. (Pere)
Hamma, S.
Hadjadj, A.
Bertomeu i Balagueró, Joan
Andreu i Batallé, Jordi
Keywords: Silici
Pel·lícules fines
Propietats òptiques
Microscòpia electrònica de transmissió
Silicon
Thin films
Optical properties
Transmission electron microscopy
Issue Date: 1996
Publisher: American Institute of Physics
Abstract: Spectroscopic ellipsometry and high resolution transmission electron microscopy have been used to characterize microcrystalline silicon films. We obtain an excellent agreement between the multilayer model used in the analysis of the optical data and the microscopy measurements. Moreover, thanks to the high resolution achieved in the microscopy measurements and to the improved optical models, two new features of the layer-by-layer deposition of microcrystalline silicon have been detected: i) the microcrystalline films present large crystals extending from the a-Si:H substrate to the film surface, despite the sequential process in the layer-by-layer deposition; and ii) a porous layer exists between the amorphous silicon substrate and the microcrystalline silicon film.
Note: Reproducció del document publicat a: http://dx.doi.org/10.1063/1.117776
It is part of: Applied Physics Letters, 1996, vol. 69, num. 4, p. 529-531
Related resource: http://dx.doi.org/10.1063/1.117776
URI: http://hdl.handle.net/2445/34659
ISSN: 0003-6951
Appears in Collections:Articles publicats en revistes (Física Aplicada)

Files in This Item:
File Description SizeFormat 
112638.pdf421.44 kBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.