Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/34939
Title: Metal Deposition on Silicon from Fluoride Solution.
Author: Gorostiza Langa, Pablo Ignacio
Director: Morante i Lleonart, Joan Ramon
Sanz Carrasco, Fausto
Keywords: Electrònica
Dipòsits metàl.lics
Silici
Issue Date: 18-Feb-2000
Publisher: Universitat de Barcelona
Abstract: [eng] Metallic deposits can be produced on the surface of silicon crystals by immersion in aqueous solutions containing fluoride and the metallic ions. This work aims to elucidate the general mechanism of the deposition process, based on "in situ" electrochemical measurements under potentiostatic control and "ex situ" microscopic and spectroscopic techniques. The mechanism developed takes into account the classical concepts of semiconductor electrochemistry, as well as the recent advances in the understanding of silicon chemistry. The consequences of this study and its technological applications are also discussed.
URI: http://hdl.handle.net/2445/34939
ISBN: 8469990306
Appears in Collections:Tesis Doctorals - Departament - Electrònica

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