Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/44746
Title: Electrical pump & probe and injected carrier losses quantification in Er doped Si slot waveguides
Author: Ramírez Ramírez, Joan Manel
Berencén Ramírez, Yonder Antonio
Ferrarese Lupi, Federico
Navarro Urrios, Daniel
Anopchenko, Aleksei
Tengattini, Andrea
Prtljaga, Nikola
Pavesi, Lorenzo
Rivallin, P.
Fedeli, Jean-Marc
Garrido Fernández, Blas
Issue Date: 17-Dec-2012
Publisher: Optical Society of America
Abstract: Electrically driven Er3+ doped Si slot waveguides emitting at 1530 nm are demonstrated. Two different Er3+ doped active layers were fabricated in the slot region: a pure SiO2 and a Si-rich oxide. Pulsed polarization driving of the waveguides was used to characterize the time response of the electroluminescence (EL) and of the signal probe transmission in 1 mm long waveguides. Injected carrier absorption losses modulate the EL signal and, since the carrier lifetime is much smaller than that of Er3+ ions, a sharp EL peak was observed when the polarization was switched off. A time-resolved electrical pump & probe measurement in combination with lock-in amplifier techniques allowed to quantify the injected carrier absorption losses. We found an extinction ratio of 6 dB, passive propagation losses of about 4 dB/mm, and a spectral bandwidth > 25 nm at an effective d.c. power consumption of 120 μW. All these performances suggest the usage of these devices as electro-optical modulators.
Note: Reproducció del document publicat a: http://dx.doi.org/10.1364/OE.20.028808
It is part of: Optics Express, 2012, vol. 20 , num. 27, p. 28808-28818
Related resource: http://dx.doi.org/10.1364/OE.20.028808
URI: http://hdl.handle.net/2445/44746
ISSN: 1094-4087
Appears in Collections:Articles publicats en revistes (Electrònica)
Publicacions de projectes de recerca finançats per la UE

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