Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/47124
Title: Influence of RF power on the properties of sputtered ZnO:Al thin films
Author: Antony, Aldrin
Carreras Seguí, Paz
Keitzl, Thomas
Roldán, Rubén
Nos Aguilà, Oriol
Frigeri, Paolo Antonio
Asensi López, José Miguel
Bertomeu i Balagueró, Joan
Keywords: Òxids metàl·lics
Optoelectrònica
Metall-òxid-semiconductors
Pel·lícules fines
Cèl·lules fotoelèctriques
Metallic oxides
Optoelectronics
Metal oxide semiconductors
Thin films
Photoelectric cells
Issue Date: 2010
Publisher: Wiley-VCH
Abstract: Transparent conducting, aluminium doped zinc oxide thin films (ZnO:Al) were deposited by radio frequency (RF) magnetron sputtering. The RF power was varied from 60 to 350Wwhereas the substrate temperature was kept at 160 °C. The structural, electrical and optical properties of the as-deposited films were found to be influenced by the deposition power. The X-ray diffraction analysis showed that all the films have a strong preferred orientation along the [001] direction. The crystallite size was varied from 14 to 36 nm, however no significant change was observed in the case of lattice constant. The optical band gap varied in the range 3.44-3.58 eV. The lowest resistivity of 1.2×10 -3Vcm was shown by the films deposited at 250 W. The mobility of the films was found to increase with the deposition power.
Note: Versió preprint del document publicat a: http://dx.doi.org/10.1002/pssa.200983765
It is part of: physica status solidi (a), 2010, vol. 207, num. 7, p. 1577-1580
Related resource: http://dx.doi.org/10.1002/pssa.200983765
URI: http://hdl.handle.net/2445/47124
ISSN: 1862-6300
Appears in Collections:Articles publicats en revistes (Física Aplicada)

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