Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/47144
Title: Electrical and optical properties of Zn-In-Sn-O transparent conducting thin films
Author: Carreras Seguí, Paz
Antony, Aldrin
Rojas Tarazona, Fredy Enrique
Bertomeu i Balagueró, Joan
Keywords: Pel·lícules fines
Metall-òxid-semiconductors
Cèl·lules solars
Optoelectrònica
Transistors
Energia fotovoltaica
Òxid de zinc
Thin films
Metal oxide semiconductors
Solar cells
Optoelectronics
Transistors
Photovoltaic power generation
Zinc oxide
Issue Date: 2011
Publisher: Elsevier B.V.
Abstract: Indium tin oxide (ITO) is one of the widely used transparent conductive oxides (TCO) for application as transparent electrode in thin film silicon solar cells or thin film transistors owing to its low resistivity and high transparency. Nevertheless, indium is a scarce and expensive element and ITO films require high deposition temperature to achieve good electrical and optical properties. On the other hand, although not competing as ITO, doped Zinc Oxide (ZnO) is a promising and cheaper alternative. Therefore, our strategy has been to deposit ITO and ZnO multicomponent thin films at room temperature by radiofrequency (RF) magnetron co-sputtering in order to achieve TCOs with reduced indium content. Thin films of the quaternary system Zn-In-Sn-O (ZITO) with improved electrical and optical properties have been achieved. The samples were deposited by applying different RF powers to ZnO target while keeping a constant RF power to ITO target. This led to ZITO films with zinc content ratio varying between 0 and 67%. The optical, electrical and morphological properties have been thoroughly studied. The film composition was analysed by X-ray Photoelectron Spectroscopy. The films with 17% zinc content ratio showed the lowest resistivity (6.6 × 10 - 4 Ω cm) and the highest transmittance (above 80% in the visible range). Though X-ray Diffraction studies showed amorphous nature for the films, using High Resolution Transmission Electron Microscopy we found that the microstructure of the films consisted of nanometric crystals embedded in a compact amorphous matrix. The effect of post deposition annealing on the films in both reducing and oxidizing atmospheres were studied. The changes were found to strongly depend on the zinc content ratio in the films.
Note: Versió postprint del document publicat a: http://dx.doi.org/10.1016/j.tsf.2011.06.078
It is part of: Thin Solid Films, 2011, vol. 520, num. 4, p. 1222-1227
Related resource: http://dx.doi.org/10.1016/j.tsf.2011.06.078
URI: http://hdl.handle.net/2445/47144
ISSN: 0040-6090
Appears in Collections:Articles publicats en revistes (Física Aplicada)

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