Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/47155
Title: Amorphous silicon thin film solar cells deposited entirely by Hot-Wire Chemical Vapour Deposition at low temperature (<150 ºC)
Author: Villar, Fernando
Antony, Aldrin
Escarré i Palou, Jordi
Ibarz, D.
Roldán, Rubén
Stella, Marco
Muñoz Ramos, David
Asensi López, José Miguel
Bertomeu i Balagueró, Joan
Keywords: Silici
Cèl·lules solars
Semiconductors amorfs
Deposició química en fase vapor
Temperatures baixes
Silicon
Solar cells
Amorphous semiconductors
Chemical vapor deposition
Low temperatures
Issue Date: 2009
Publisher: Elsevier B.V.
Abstract: Amorphous silicon n-i-p solar cells have been fabricated entirely by Hot-Wire Chemical Vapour Deposition (HW-CVD) at low process temperature < 150 °C. A textured-Ag/ZnO back reflector deposited on Corning 1737F by rf magnetron sputtering was used as the substrate. Doped layers with very good conductivity and a very less defective intrinsic a-Si:H layer were used for the cell fabrication. A double n-layer (μc-Si:H/a-Si:H) and μc-Si:H p-layer were used for the cell. In this paper, we report the characterization of these layers and the integration of these layers in a solar cell fabricated at low temperature. An initial efficiency of 4.62% has been achieved for the n-i-p cell deposited at temperatures below 150 °C over glass/Ag/ZnO textured back reflector.
Note: Versió postprint del document publicat a: http://dx.doi.org/10.1016/j.tsf.2009.01.074
It is part of: Thin Solid Films, 2009, vol. 517, num. 12, p. 3575-3577
Related resource: http://dx.doi.org/10.1016/j.tsf.2009.01.074
URI: http://hdl.handle.net/2445/47155
ISSN: 0040-6090
Appears in Collections:Articles publicats en revistes (Física Aplicada)

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