Please use this identifier to cite or link to this item:
Title: Electronic transport in low temperature nanocrystalline silicon thin-film transistors obtained by Hot-Wire CVD
Author: Puigdollers i González, Joaquim
Voz Sánchez, Cristóbal
Orpella, Albert
Martín, I.
Soler Vilamitjana, David
Fonrodona Turon, Marta
Bertomeu i Balagueró, Joan
Andreu i Batallé, Jordi
Alcubilla González, Ramón
Keywords: Deposició química en fase vapor
Pel·lícules fines
Chemical vapor deposition
Thin films
Issue Date: 2002
Publisher: Elsevier B.V.
Abstract: Hydrogenated nanocrystalline silicon (nc-Si:H) obtained by hot-wire chemical vapour deposition (HWCVD) at low substrate temperature (150 °C) has been incorporated as the active layer in bottom-gate thin-film transistors (TFTs). These devices were electrically characterised by measuring in vacuum the output and transfer characteristics for different temperatures. The field-effect mobility showed a thermally activated behaviour which could be attributed to carrier trapping at the band tails, as in hydrogenated amorphous silicon (a-Si:H), and potential barriers for the electronic transport. Trapped charge at the interfaces of the columns, which are typical in nc-Si:H, would account for these barriers. By using the Levinson technique, the quality of the material at the column boundaries could be studied. Finally, these results were interpreted according to the particular microstructure of nc-Si:H.
Note: Versió postprint del document publicat a:
It is part of: Journal of non-Crystalline Solids, 2002, vol. 299/302, num. 1, p. 400-404
Related resource:
ISSN: 0022-3093
Appears in Collections:Articles publicats en revistes (Física Aplicada)

Files in This Item:
File Description SizeFormat 
188307.pdf144.82 kBAdobe PDFView/Open

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.