Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/47295
Title: Control of doped layers in p-i-n microcrystalline solar cells fully deposited with HWCVD
Author: Fonrodona Turon, Marta
Soler Vilamitjana, David
Escarré i Palou, Jordi
Asensi López, José Miguel
Bertomeu i Balagueró, Joan
Andreu i Batallé, Jordi
Keywords: Cèl·lules solars
Silici
Deposició química en fase vapor
Solar cells
Silicon
Chemical vapor deposition
Issue Date: 2004
Publisher: Elsevier B.V.
Abstract: In this paper, the influence of the deposition conditions on the performance of p-i-n microcrystalline silicon solar cells completely deposited by hot-wire chemical vapor deposition is studied. With this aim, the role of the doping concentration, the substrate temperature of the p-type layer and of amorphous silicon buffer layers between the p/i and i/n microcrystalline layers is investigated. Best results are found when the p-type layer is deposited at a substrate temperature of 125 °C. The dependence seen of the cell performance on the thickness of the i layer evidenced that the efficiency of our devices is still limited by the recombination within this layer, which is probably due to the charge of donor centers most likely related to oxygen.
Note: Versió postprint del document publicat a: http://dx.doi.org/10.1016/j.jnoncrysol.2004.03.070
It is part of: Journal of non-Crystalline Solids, 2004, vol. 338-340, p. 659-662
Related resource: http://dx.doi.org/10.1016/j.jnoncrysol.2004.03.070
URI: http://hdl.handle.net/2445/47295
ISSN: 0022-3093
Appears in Collections:Articles publicats en revistes (Física Aplicada)

Files in This Item:
File Description SizeFormat 
510103.pdf200.69 kBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.