Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/47300
Title: Progress in single junction microcrystalline silicon solar cells deposited by Hot-Wire CVD
Author: Fonrodona Turon, Marta
Soler Vilamitjana, David
Villar, Fernando
Escarré i Palou, Jordi
Asensi López, José Miguel
Bertomeu i Balagueró, Joan
Andreu i Batallé, Jordi
Keywords: Cèl·lules solars
Silici
Deposició química en fase vapor
Energia solar
Solar cells
Silicon
Chemical vapor deposition
Solar energy
Issue Date: 2006
Publisher: Elsevier B.V.
Abstract: Hot-Wire Chemical Vapor Deposition has led to microcrystalline silicon solar cell efficiencies similar to those obtained with Plasma Enhanced CVD. The light-induced degradation behavior of microcrystalline silicon solar cells critically depends on the properties of their active layer. In the regime close to the transition to amorphous growth (around 60% of amorphous volume fraction), cells incorporating an intrinsic layer with slightly higher crystalline fraction and [220] preferential orientation are stable after more than 7000 h of AM1.5 light soaking. On the contrary, solar cells whose intrinsic layer has a slightly lower crystalline fraction and random or [111] preferential orientation exhibit clear light-induced degradation effects. A revision of the efficiencies of Hot-Wire deposited microcrystalline silicon solar cells is presented and the potential efficiency of this technology is also evaluated.
Note: Versió postprint del document publicat a: http://dx.doi.org/10.1016/j.tsf.2005.07.146
It is part of: Thin Solid Films, 2006, vol. 501, num. 1-2, p. 247-251
Related resource: http://dx.doi.org/10.1016/j.tsf.2005.07.146
URI: http://hdl.handle.net/2445/47300
ISSN: 0040-6090
Appears in Collections:Articles publicats en revistes (Física Aplicada)

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