Please use this identifier to cite or link to this item:
Title: Shutterless deposition of phosphorous doped microcrystalline silicon by Cat-CVD
Author: Fonrodona Turon, Marta
Gordijn, A.
Van Veen, M. K.
Van der Werf, C. H. M.
Bertomeu i Balagueró, Joan
Andreu i Batallé, Jordi
Schropp, Ruud E. I., 1959-
Keywords: Silici
Deposició química en fase vapor
Cèl·lules solars
Pel·lícules fines
Chemical vapor deposition
Solar cells
Thin films
Issue Date: 2003
Publisher: Elsevier B.V.
Abstract: In this paper we present results on phosphorous-doped μc-Si:H by catalytic chemical vapour deposition in a reactor with an internal arrangement that does not include a shutter. An incubation phase of around 20 nm seems to be the result of the uncontrolled conditions that take place during the first stages of deposition. The optimal deposition conditions found lead to a material with a dark conductivity of 12.8 S/cm, an activation energy of 0.026 eV and a crystalline fraction of 0.86. These values make the layers suitable to be implemented in solar cells.
Note: Versió postprint del document publicat a:
It is part of: Thin Solid Films, 2003, vol. 430, num. 1-2, p. 145-148
Related resource:
ISSN: 0040-6090
Appears in Collections:Articles publicats en revistes (Física Aplicada)

Files in This Item:
File Description SizeFormat 
507390.pdf317.87 kBAdobe PDFView/Open

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.