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Title: Surface passivation of crystalline silicon by Cat-CVD amorphous and nanocrystalline thin silicon films
Author: Voz Sánchez, Cristóbal
Martin Garcia, Isidro
Orpella, Albert
Puigdollers i González, Joaquim
Vetter, M.
Alcubilla González, Ramón
Soler Vilamitjana, David
Fonrodona Turon, Marta
Bertomeu i Balagueró, Joan
Andreu i Batallé, Jordi
Keywords: Cèl·lules solars
Deposició química en fase vapor
Pel·lícules fines
Solar cells
Chemical vapor deposition
Thin films
Issue Date: 2003
Publisher: Elsevier B.V.
Abstract: In this work, we study the electronic surface passivation of crystalline silicon with intrinsic thin silicon films deposited by Catalytic CVD. The contactless method used to determine the effective surface recombination velocity was the quasi-steady-state photoconductance technique. Hydrogenated amorphous and nanocrystalline silicon films were evaluated as passivating layers on n- and p-type float zone silicon wafers. The best results were obtained with amorphous silicon films, which allowed effective surface recombination velocities as low as 60 and 130 cms -1 on p- and n-type silicon, respectively. To our knowledge, these are the best results ever reported with intrinsic amorphous silicon films deposited by Catalytic CVD. The passivating properties of nanocrystalline silicon films strongly depended on the deposition conditions, especially on the filament temperature. Samples grown at lower filament temperatures (1600 °C) allowed effective surface recombination velocities of 450 and 600 cms -1 on n- and p-type silicon.
Note: Versió postprint del document publicat a:
It is part of: Thin Solid Films, 2003, vol. 430, num. 1-2, p. 270-273
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ISSN: 0040-6090
Appears in Collections:Articles publicats en revistes (Física Aplicada)

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