Please use this identifier to cite or link to this item:
Title: Stability of hydrogenated nanocrystalline silicon thin-film transistors
Author: Orpella, Albert
Voz Sánchez, Cristóbal
Puigdollers i González, Joaquim
Dosev, D.
Fonrodona Turon, Marta
Soler Vilamitjana, David
Bertomeu i Balagueró, Joan
Asensi López, José Miguel
Andreu i Batallé, Jordi
Alcubilla González, Ramón
Keywords: Pel·lícules fines
Deposició química en fase vapor
Thin films
Chemical vapor deposition
Issue Date: 2001
Publisher: Elsevier B.V.
Abstract: Hydrogenated nanocrystalline silicon thin-films were obtained by catalytic chemical vapour deposition at low substrate temperatures (150°C) and high deposition rates (10 Å/s). These films, with crystalline fractions over 90%, were incorporated as the active layers of bottom-gate thin-film transistors. The initial field-effect mobilities of these devices were over 0.5 cm 2/V s and the threshold voltages lower than 4 V. In this work, we report on the enhanced stability of these devices under prolonged times of gate bias stress compared to amorphous silicon thin-film transistors. Hence, they are promising candidates to be considered in the future for applications such as flat-panel displays.
Note: Versió postprint del document publicat a:
It is part of: Thin Solid Films, 2001, vol. 395, num. 1-2, p. 334-337
Related resource:
ISSN: 0040-6090
Appears in Collections:Articles publicats en revistes (Física Aplicada)

Files in This Item:
File Description SizeFormat 
171329.pdf95.1 kBAdobe PDFView/Open

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.