Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/47378
Title: Stability of hydrogenated nanocrystalline silicon thin-film transistors
Author: Orpella, Albert
Voz Sánchez, Cristóbal
Puigdollers i González, Joaquim
Dosev, D.
Fonrodona Turon, Marta
Soler Vilamitjana, David
Bertomeu i Balagueró, Joan
Asensi López, José Miguel
Andreu i Batallé, Jordi
Alcubilla González, Ramón
Keywords: Pel·lícules fines
Silici
Nanocristalls
Semiconductors
Catàlisi
Deposició química en fase vapor
Thin films
Silicon
Nanocrystals
Semiconductors
Catalysis
Chemical vapor deposition
Issue Date: 2001
Publisher: Elsevier B.V.
Abstract: Hydrogenated nanocrystalline silicon thin-films were obtained by catalytic chemical vapour deposition at low substrate temperatures (150°C) and high deposition rates (10 Å/s). These films, with crystalline fractions over 90%, were incorporated as the active layers of bottom-gate thin-film transistors. The initial field-effect mobilities of these devices were over 0.5 cm 2/V s and the threshold voltages lower than 4 V. In this work, we report on the enhanced stability of these devices under prolonged times of gate bias stress compared to amorphous silicon thin-film transistors. Hence, they are promising candidates to be considered in the future for applications such as flat-panel displays.
Note: Versió postprint del document publicat a: http://dx.doi.org/10.1016/S0040-6090(01)01290-1
It is part of: Thin Solid Films, 2001, vol. 395, num. 1-2, p. 334-337
Related resource: http://dx.doi.org/10.1016/S0040-6090(01)01290-1
URI: http://hdl.handle.net/2445/47378
ISSN: 0040-6090
Appears in Collections:Articles publicats en revistes (Física Aplicada)

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