Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/47380
Title: Thin silicon films ranging from amorphous to nanocrystalline obtained by Hot-Wire CVD
Author: Soler i Vilamitjana, David
Fonrodona Turon, Marta
Voz Sánchez, Cristóbal
Bertomeu i Balagueró, Joan
Andreu i Batallé, Jordi
Keywords: Silici
Pel·lícules fines
Nanocristalls
Deposició en fase de vapor
Cèl·lules solars
Silicon
Thin films
Nanocrystals
Vapor-plating
Solar cells
Issue Date: 2001
Publisher: Elsevier B.V.
Abstract: In this paper, we have presented results on silicon thin films deposited by hot-wire CVD at low substrate temperatures (200 °C). Films ranging from amorphous to nanocrystalline were obtained by varying the filament temperature from 1500 to 1800 °C. A crystalline fraction of 50% was obtained for the sample deposited at 1700 °C. The results obtained seemed to indicate that atomic hydrogen plays a leading role in the obtaining of nanocrystalline silicon. The optoelectronic properties of the amorphous material obtained in these conditions are slightly poorer than the ones observed in device-grade films grown by plasma-enhanced CVD due to a higher hydrogen incorporation (13%).
Note: Versió postprint del document publicat a: http://dx.doi.org/10.1016/S0040-6090(00)01615-1
It is part of: Thin Solid Films, 2001, vol. 383, num. 1-2, p. 189-191
Related resource: http://dx.doi.org/10.1016/S0040-6090(00)01615-1
URI: http://hdl.handle.net/2445/47380
ISSN: 0040-6090
Appears in Collections:Articles publicats en revistes (Física Aplicada)

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