Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/47381
Title: Microcrystalline silicon thin film transistors obtained by Hot-Wire CVD
Author: Puigdollers i González, Joaquim
Orpella, Albert
Alcubilla González, Ramón
Dosev, D.
Pallarés Curto, Jordi
Peiró, D.
Voz Sánchez, Cristóbal
Bertomeu i Balagueró, Joan
Andreu i Batallé, Jordi
Marsal Garví, Lluís F. (Lluís Francesc)
Keywords: Silici
Pel·lícules fines
Microelectrònica
Deposició química en fase vapor
Transistors
Semiconductors
Cèl·lules solars
Silicon
Thin films
Microelectronics
Chemical vapor deposition
Transistors
Semiconductors
Solar cells
Issue Date: 2000
Publisher: Elsevier B.V.
Abstract: Polysilicon thin film transistors (TFT) are of great interest in the field of large area microelectronics, especially because of their application as active elements in flat panel displays. Different deposition techniques are in tough competition with the objective to obtain device-quality polysilicon thin films at low temperature. In this paper we present the preliminary results obtained with the fabrication of TFT deposited by hot-wire chemical vapor deposition (HWCVD). Some results concerned with the structural characterization of the material and electrical performance of the device are presented.
Note: Versió postprint del document publicat a: http://dx.doi.org/10.1016/S0921-5107(99)00252-4
It is part of: Materials Science and Engineering B-Solid State Materials for Advanced Technology, 2000, vol. 69-70, p. 526-529
Related resource: http://dx.doi.org/10.1016/S0921-5107(99)00252-4
URI: http://hdl.handle.net/2445/47381
ISSN: 0921-5107
Appears in Collections:Articles publicats en revistes (Física Aplicada)

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