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http://hdl.handle.net/2445/47382
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DC Field | Value | Language |
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dc.contributor.author | Voz Sánchez, Cristóbal | - |
dc.contributor.author | Peiró, D. | - |
dc.contributor.author | Bertomeu i Balagueró, Joan | - |
dc.contributor.author | Soler Vilamitjana, David | - |
dc.contributor.author | Fonrodona Turon, Marta | - |
dc.contributor.author | Andreu i Batallé, Jordi | - |
dc.date.accessioned | 2013-10-29T16:15:45Z | - |
dc.date.available | 2013-10-29T16:15:45Z | - |
dc.date.issued | 2000 | - |
dc.identifier.issn | 0921-5107 | - |
dc.identifier.uri | http://hdl.handle.net/2445/47382 | - |
dc.description.abstract | In this paper we present new results on doped μc-Si:H thin films deposited by hot-wire chemical vapour deposition (HWCVD) in the very low temperature range (125-275°C). The doped layers were obtained by the addition of diborane or phosphine in the gas phase during deposition. The incorporation of boron and phosphorus in the films and their influence on the crystalline fraction are studied by secondary ion mass spectrometry and Raman spectroscopy, respectively. Good electrical transport properties were obtained in this deposition regime, with best dark conductivities of 2.6 and 9.8 S cm -1 for the p- and n-doped films, respectively. The effect of the hydrogen dilution and the layer thickness on the electrical properties are also studied. Some technological conclusions referred to cross contamination could be deduced from the nominally undoped samples obtained in the same chamber after p- and n-type heavily doped layers. | - |
dc.format.extent | 10 p. | - |
dc.format.mimetype | application/pdf | - |
dc.language.iso | eng | - |
dc.publisher | Elsevier B.V. | - |
dc.relation.isformatof | Versió postprint del document publicat a: http://dx.doi.org/10.1016/S0921-5107(99)00308-6 | - |
dc.relation.ispartof | Materials Science and Engineering B-Solid State Materials for Advanced Technology, 2000, vol. 69-70, p. 278-283 | - |
dc.relation.uri | http://dx.doi.org/10.1016/S0921-5107(99)00308-6 | - |
dc.rights | (c) Elsevier B.V., 2000 | - |
dc.source | Articles publicats en revistes (Física Aplicada) | - |
dc.subject.classification | Silici | - |
dc.subject.classification | Deposició química en fase vapor | - |
dc.subject.classification | Temperatures baixes | - |
dc.subject.classification | Propietats elèctriques | - |
dc.subject.classification | Pel·lícules fines | - |
dc.subject.classification | Energia solar | - |
dc.subject.classification | Transistors | - |
dc.subject.classification | Bor | - |
dc.subject.classification | Fòsfor | - |
dc.subject.other | Silicon | - |
dc.subject.other | Chemical vapor deposition | - |
dc.subject.other | Low temperatures | - |
dc.subject.other | Electric properties | - |
dc.subject.other | Thin films | - |
dc.subject.other | Solar energy | - |
dc.subject.other | Transistors | - |
dc.subject.other | Boron | - |
dc.subject.other | Phosphorus | - |
dc.title | Optimisation of doped microcrystalline silicon films deposited at very low temperatures by Hot-Wire CVD | - |
dc.type | info:eu-repo/semantics/article | - |
dc.type | info:eu-repo/semantics/acceptedVersion | - |
dc.identifier.idgrec | 147805 | - |
dc.date.updated | 2013-10-29T16:15:46Z | - |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | - |
Appears in Collections: | Articles publicats en revistes (Física Aplicada) |
Files in This Item:
File | Description | Size | Format | |
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147805.pdf | 142.44 kB | Adobe PDF | View/Open |
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