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http://hdl.handle.net/2445/47417
Title: | Thin Film Transistors obtained by Hot-Wire CVD |
Author: | Puigdollers i González, Joaquim Orpella, Albert Dosev, D. Voz Sánchez, Cristóbal Pallarés Curto, Jordi Marsal Garví, Lluís F. (Lluís Francesc) Bertomeu i Balagueró, Joan Andreu i Batallé, Jordi Alcubilla González, Ramón Peiró, D. |
Keywords: | Silici Pel·lícules fines Transistors Deposició química en fase vapor Temperatures baixes Semiconductors amorfs Silicon Thin films Transistors Chemical vapor deposition Low temperatures Amorphous semiconductors |
Issue Date: | 2000 |
Publisher: | Elsevier B.V. |
Abstract: | Hydrogenated microcrystalline silicon films obtained at low temperature (150-280°C) by hot wire chemical vapour deposition at two different process pressures were measured by Raman spectroscopy, X-ray diffraction (XRD) spectroscopy and photothermal deflection spectroscopy (PDS). A crystalline fraction >90% with a subgap optical absortion 10 cm -1 at 0.8 eV were obtained in films deposited at growth rates >0.8 nm/s. These films were incorporated in n-channel thin film transistors and their electrical properties were measured. The saturation mobility was 0.72 ± 0.05 cm 2/ V s and the threshold voltage around 0.2 eV. The dependence of their conductance activation energies on gate voltages were related to the properties of the material. |
Note: | Versió postprint del document publicat a: http://dx.doi.org/10.1016/S0022-3093(99)00942-4 |
It is part of: | Journal of non-Crystalline Solids, 2000, vol. 266-269, num. 2, p. 1304-1309 |
URI: | http://hdl.handle.net/2445/47417 |
Related resource: | http://dx.doi.org/10.1016/S0022-3093(99)00942-4 |
ISSN: | 0022-3093 |
Appears in Collections: | Articles publicats en revistes (Física Aplicada) |
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