Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/47417
Title: Thin Film Transistors obtained by Hot-Wire CVD
Author: Puigdollers i González, Joaquim
Orpella, Albert
Dosev, D.
Voz Sánchez, Cristóbal
Pallarés Curto, Jordi
Marsal Garví, Lluís F. (Lluís Francesc)
Bertomeu i Balagueró, Joan
Andreu i Batallé, Jordi
Alcubilla González, Ramón
Peiró, D.
Keywords: Silici
Pel·lícules fines
Transistors
Deposició química en fase vapor
Temperatures baixes
Semiconductors amorfs
Silicon
Thin films
Transistors
Chemical vapor deposition
Low temperatures
Amorphous semiconductors
Issue Date: 2000
Publisher: Elsevier B.V.
Abstract: Hydrogenated microcrystalline silicon films obtained at low temperature (150-280°C) by hot wire chemical vapour deposition at two different process pressures were measured by Raman spectroscopy, X-ray diffraction (XRD) spectroscopy and photothermal deflection spectroscopy (PDS). A crystalline fraction >90% with a subgap optical absortion 10 cm -1 at 0.8 eV were obtained in films deposited at growth rates >0.8 nm/s. These films were incorporated in n-channel thin film transistors and their electrical properties were measured. The saturation mobility was 0.72 ± 0.05 cm 2/ V s and the threshold voltage around 0.2 eV. The dependence of their conductance activation energies on gate voltages were related to the properties of the material.
Note: Versió postprint del document publicat a: http://dx.doi.org/10.1016/S0022-3093(99)00942-4
It is part of: Journal of non-Crystalline Solids, 2000, vol. 266-269, num. 2, p. 1304-1309
Related resource: http://dx.doi.org/10.1016/S0022-3093(99)00942-4
URI: http://hdl.handle.net/2445/47417
ISSN: 0022-3093
Appears in Collections:Articles publicats en revistes (Física Aplicada)

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