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Title: Investigation of defect formation and electronic transport in microcrystalline silicon deposited by hot-wire CVD
Author: Stöger, M.
Breymesser, A.
Schlosser, V.
Ramadori, M.
Plunger, V.
Peiró, D.
Voz Sánchez, Cristóbal
Bertomeu i Balagueró, Joan
Nelhiebel, M.
Schattschneider, P.
Andreu i Batallé, Jordi
Keywords: Silici
Deposició química en fase vapor
Microscòpia electrònica de transmissió
Chemical vapor deposition
Transmission electron microscopy
Issue Date: 1999
Publisher: Elsevier B.V.
Abstract: We have investigated doped and undoped layers of microcrystalline silicon prepared by hot-wire chemical vapour deposition optically, electrically and by means of transmission electron microscopy. Besides needle-like crystals grown perpendicular to the substrate's surface, all of the layers contained a noncrystalline phase with a volume fraction between 4% and 25%. A high oxygen content of several per cent in the porous phase was detected by electron energy loss spectrometry. Deep-level transient spectroscopy of the crystals suggests that the concentration of electrically active defects is less than 1% of the undoped background concentration of typically 10^17 cm -3. Frequency-dependent measurements of the conductance and capacitance perpendicular to the substrate surface showed that a hopping process takes place within the noncrystalline phase parallel to the conduction in the crystals. The parasitic contribution to the electrical circuit arising from the porous phase is believed to be an important loss mechanism in the output of a pin-structured photovoltaic solar cell deposited by hot-wire CVD.
Note: Versió postprint del document publicat a:
It is part of: Physica B, 1999, vol. 273-274, p. 540-543
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ISSN: 0921-4526
Appears in Collections:Articles publicats en revistes (Física Aplicada)

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