Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/47603
Title: Structure of a-Si:H/a-Si1-xCx:H multilayers deposited in a reactor with automated substrate holder
Author: Bertomeu i Balagueró, Joan
Asensi López, José Miguel
Puigdollers i González, Joaquim
Andreu i Batallé, Jordi
Morenza Gil, José Luis
Keywords: Silici
Semiconductors amorfs
Cèl·lules solars
Pel·lícules fines
Transistors
Nanotecnologia
Deposició química en fase vapor
Silicon
Amorphous semiconductors
Solar cells
Thin films
Transistors
Nanotechnology
Chemical vapor deposition
Issue Date: 1993
Publisher: Elsevier Ltd
Abstract: This paper deals with the structural properties of a-Si:H/a-Si1-xCx: H multilayers deposited by glow-discharge decomposition of SiH4 and SiH4 and CH4 mixtures. The main feature of the rf plasma reactor is an automated substrate holder. The plasma stabilization time and its influence on the multilayer obtained is discussed. A series of a-Si:H/a-Si1-xCx: H multilayers has been deposited and characterized by secondary ion mass spectrometry (SIMS), X-ray diffraction (XRD) and transmission electron microscopy (TEM). No asymmetry between the two types of interface has been observed. The results show that the multilayers present a very good periodicity and low roughness. The difficulty of determining the abruptness of the multilayer at the nanometer scale is discussed.
Note: Versió postprint del document publicat a: http://dx.doi.org/10.1016/0042-207X(93)90361-D
It is part of: Vacuum, 1993, vol. 44, num. 2, p. 129-134
Related resource: http://dx.doi.org/10.1016/0042-207X(93)90361-D
URI: http://hdl.handle.net/2445/47603
ISSN: 0042-207X
Appears in Collections:Articles publicats en revistes (Física Aplicada)

Files in This Item:
File Description SizeFormat 
070216.pdf209.19 kBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.