Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/47605
Title: Studies on grain boundaries in nanocrystalline silicon grown by Hot-Wire CVD
Author: Fonrodona Turon, Marta
Soler Vilamitjana, David
Asensi López, José Miguel
Bertomeu i Balagueró, Joan
Andreu i Batallé, Jordi
Keywords: Silici
Nanocristalls
Deposició química en fase vapor
Oxigen
Pel·lícules fines
Cèl·lules solars
Silicon
Nanocrystals
Chemical vapor deposition
Oxygen
Thin films
Solar cells
Issue Date: 2002
Publisher: Elsevier B.V.
Abstract: The use of a tantalum wire in hot-wire chemical vapour deposition (HWCVD) has allowed the deposition of dense nanocrystalline silicon at low filament temperatures (1550 °C). A transition in the crystalline preferential orientation from (2 2 0) to (1 1 1) was observed around 1700 °C. Transmission electron microscopy (TEM) images, together with secondary ion mass spectrometry (SIMS) measurements, suggested that no oxidation occurred in materials obtained at low filament temperature due to the high density of the tissue surrounding grain boundaries. A greater concentration of SiH 3 radicals formed at these temperatures seemed to be responsible for the higher density.
Note: Versió postprint del document publicat a: http://dx.doi.org/10.1016/S0022-3093(01)00943-7
It is part of: Journal of non-Crystalline Solids, 2002, vol. 299-302, num. 1, p. 14-19
Related resource: http://dx.doi.org/10.1016/S0022-3093(01)00943-7
URI: http://hdl.handle.net/2445/47605
ISSN: 0022-3093
Appears in Collections:Articles publicats en revistes (Física Aplicada)

Files in This Item:
File Description SizeFormat 
188305.pdf448.99 kBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.