Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/47606
Title: Optoelectronic studies in nanocrystalline silicon Schottky diodes obtained by Hot-Wire Chemical Vapour Deposition
Author: Voz Sánchez, Cristóbal
Soler Vilamitjana, David
Fonrodona Turon, Marta
Bertomeu i Balagueró, Joan
Asensi López, José Miguel
Andreu i Batallé, Jordi
Keywords: Optoelectrònica
Silici
Nanocristalls
Deposició química en fase vapor
Cèl·lules solars
Optoelectronics
Silicon
Nanocrystals
Chemical vapor deposition
Solar cells
Issue Date: 2001
Publisher: Elsevier B.V.
Abstract: The very usual columnar growth of nanocrystalline silicon leads to electronic transport anisotropies. Whereas electrical measurements with coplanar electrodes only provide information about the electronic transport parallel to the substrate, it is the transverse transport which determines the collection efficiency in thin film solar cells. Hence, Schottky diodes on transparent electrodes were obtained by hot-wire CVD in order to perform external quantum efficiency and surface photovoltage studies in sandwich configuration. These measurements allowed to calculate a transverse collection length, which must correlate with the photovoltaic performance of thin film solar cells. Furthermore, the density of charge trapped at localized states in the bandgap was estimated from the voltage dependence of the depletion capacitance of these rectifying contacts.
Note: Versió postprint del document publicat a: http://dx.doi.org/10.1016/S0040-6090(00)01574-1
It is part of: Thin Solid Films, 2001, vol. 383, num. 1-2, p. 258-260
Related resource: http://dx.doi.org/10.1016/S0040-6090(00)01574-1
URI: http://hdl.handle.net/2445/47606
ISSN: 0040-6090
Appears in Collections:Articles publicats en revistes (Física Aplicada)

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