Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/48334
Title: Domain matched epitaxial growth of Bi1.5Zn1Nb1.5O7 thin films by pulsed laser deposition
Author: Krishnaprasad, P. S.
Antony, Aldrin
Rojas Tarazona, Fredy Enrique
Bertomeu i Balagueró, Joan
Jayaraj, M. K.
Keywords: Pel·lícules fines
Microelectrònica
Làsers
Semiconductors
Microscòpia electrònica de transmissió
Optoelectrònica
Difracció de raigs X
Metalls
Ceràmiques electròniques
Thin films
Microelectronics
Lasers
Semiconductors
Transmission electron microscopy
Optoelectronics
X-rays diffraction
Metals
Electronic ceramics
Issue Date: 15-Feb-2014
Publisher: Elsevier B.V.
Abstract: Bi1.5Zn1Nb1.5O7 (BZN) epitaxial thin films were grown by pulsed laser deposition on Al2O3 with a double ZnO buffer layer through domain matching epitaxy (DME) mechanism. The pole figure analysis and reciprocal space mapping revealed the single crystalline nature of the thin film. The pole figure analysis also shows a 60º twinning for the (222) oriented crystals. Sharp intense spots in the SAED pattern also indicate the high crystalline nature of BZN thin film. The Fourier filtered HRTEM images of the BZN-ZnO interface confirms the domain matched epitaxy of BZN with ZnO buffer. An electric field dependent dielectric tunability of 68% was obtained for the BZN thin films with inter digital capacitors patterned over the film.
Note: Versió postprint del document publicat a: http://dx.doi.org/10.1016/j.jallcom.2013.10.025
It is part of: Journal of Alloys and Compounds, 2014, vol. 586, p. 524-528
Related resource: http://dx.doi.org/10.1016/j.jallcom.2013.10.025
URI: http://hdl.handle.net/2445/48334
ISSN: 0925-8388
Appears in Collections:Articles publicats en revistes (Física Aplicada)

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