Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/50483
Title: Compositional influence on the electrical performance of zinc indium tin oxide transparent thin-film transistors
Author: Marsal, A.
Carreras Seguí, Paz
Puigdollers i González, Joaquim
Voz Sánchez, Cristóbal
Galindo, S.
Alcubilla González, Ramón
Bertomeu i Balagueró, Joan
Antony, Aldrin
Keywords: Òxids
Pel·lícules fines
Optoelectrònica
Transistors
Mecànica estadística
Circuits integrats
Oxides
Thin films
Optoelectronics
Transistors
Statistical mechanics
Integrated circuits
Issue Date: 31-Mar-2014
Publisher: Elsevier B.V.
Abstract: In this work, zinc indium tin oxide layers with different compositions are used as the active layer of thin film transistors. This multicomponent transparent conductive oxide is gaining great interest due to its reduced content of the scarce indium element. Experimental data indicate that the incorporation of zinc promotes the creation of oxygen vacancies. In thin-film transistors this effect leads to a higher threshold voltage values. The field-effect mobility is also strongly degraded, probably due to coulomb scattering by ionized defects. A post deposition annealing in air reduces the density of oxygen vacancies and improves the fieldeffect mobility by orders of magnitude. Finally, the electrical characteristics of the fabricated thin-film transistors have been analyzed to estimate the density of states in the gap of the active layers. These measurements reveal a clear peak located at 0.3 eV from the conduction band edge that could be attributed to oxygen vacancies.
Note: Versió postprint del document publicat a: http://dx.doi.org/10.1016/j.tsf.2013.08.010
It is part of: Thin Solid Films, 2014, vol. 555, p. 107-111
Related resource: http://dx.doi.org/10.1016/j.tsf.2013.08.010
URI: http://hdl.handle.net/2445/50483
ISSN: 0040-6090
Appears in Collections:Articles publicats en revistes (Física Aplicada)

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