Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/52832
Title: Spatial mapping of exciton lifetimes in single ZnO nanowires
Author: Reparaz, J. S.
Callsen, G.
Wagner, M. R.
Güell Vilà, Frank
Morante i Lleonart, Joan Ramon
Sotomayor Torres, C. M.
Hoffmann, A.
Keywords: Nanoelectrònica
Semiconductors
Optoelectrònica
Òxid de zinc
Luminescència
Nanoelectronics
Semiconductors
Optoelectronics
Zinc oxide
Luminescence
Issue Date: 2013
Publisher: AIP Publishing
Abstract: We investigate the spatial dependence of the exciton lifetimes in single ZnO nanowires. We have found that the free exciton and bound exciton lifetimes exhibit a maximum at the center of nanowires, while they decrease by 30% towards the tips. This dependence is explained by considering the cavity-like properties of the nanowires in combination with the Purcell effect. We show that the lifetime of the bound-excitons scales with the localization energy to the power of 3/2, which validates the model of Rashba and Gurgenishvili at the nanoscale.
Note: Reproducció del document publicat a: http://dx.doi.org/10.1063/1.4808441
It is part of: APL Materials, 2013, vol. 1, p. 012103-1-012103-7
Related resource: http://dx.doi.org/10.1063/1.4808441
URI: http://hdl.handle.net/2445/52832
ISSN: 2166-532X
Appears in Collections:Articles publicats en revistes (Electrònica)

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