1. Dipòsit Digital de la Universitat de Barcelona
  2. Treballs de l'alumnat
  3. Treballs Finals de Grau (TFG) - Física
Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/59730
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dc.contributor.advisorVilà i Arbonès, Anna Maria-
dc.contributor.authorVergara Cruz, Jorge Carlos-
dc.date.accessioned2014-11-17T12:46:52Z-
dc.date.available2014-11-17T12:46:52Z-
dc.date.issued2014-09-
dc.identifier.urihttp://hdl.handle.net/2445/59730-
dc.descriptionTreballs Finals de Grau de Física, Facultat de Física, Universitat de Barcelona, Any: 2014, Tutora: Anna Vilà Arbonesca
dc.description.abstractThe synthesis through a simple chemical route of SnO powder was successfully done. By using a home-made Hall-effect setup, its p-type behaviour is confirmed, showing high hole mobility around 102 cm2·V-1·s-1 and low resistivity ρ=6.52 Ω·m. Moreover the powder exhibits an interesting behaviour with the temperature changing its conformation to SnO2 that is n-type semiconductor.ca
dc.format.extent4 p.-
dc.format.mimetypeapplication/pdf-
dc.language.isoengca
dc.rightscc-by-nc-nd (c) Vergara Cruz, 2014-
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/-
dc.sourceTreballs Finals de Grau (TFG) - Física-
dc.subject.classificationSemiconductorscat
dc.subject.classificationCristallscat
dc.subject.classificationTreballs de fi de graucat
dc.subject.otherSemiconductorseng
dc.subject.otherCrystalseng
dc.subject.otherBachelor's theseseng
dc.titlePreparation and characterization of tin (II) oxide powder as p-type semiconductor for its deposition by ink jet printingeng
dc.typeinfo:eu-repo/semantics/bachelorThesisca
dc.rights.accessRightsinfo:eu-repo/semantics/openAccessca
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