Please use this identifier to cite or link to this item:
http://hdl.handle.net/2445/59961| Title: | Inkjet printing of flexible MOS structures based on graphene and high-k dielectrics |
| Author: | Olmedo Ferrer, Omar |
| Director/Tutor: | Cirera Hernández, Albert |
| Keywords: | Metall-òxid-semiconductors Impressió digital Treballs de fi de màster Metal oxide semiconductors Digital printing Master's theses |
| Issue Date: | Jul-2014 |
| Abstract: | MOS structures have been inkjet printed using silver, hafnium oxide (HfO2) and reduced graphene oxide (rGO). Main drawbacks with inkjet printing and electrospray deposition have been overcome. C-V characteristics of these devices have been measured and common phenomenology has been established. Deviations from known theory as well as technical improvement have been proposed. |
| Note: | Màster Oficial en Física Avançada, Facultat de Física, Universitat de Barcelona, Curs: 2014, Tutors: Olga Casals i Albert Cirera |
| URI: | http://hdl.handle.net/2445/59961 |
| Appears in Collections: | Màster Oficial - Física Avançada |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| TFM Omar Olmedo.pdf | 1.13 MB | Adobe PDF | View/Open |
This item is licensed under a
Creative Commons License
