1. Dipòsit Digital de la Universitat de Barcelona
  2. Treballs de l'alumnat
  3. Màster Oficial - Física Avançada
Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/59961
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dc.contributor.advisorCirera Hernández, Albert-
dc.contributor.authorOlmedo Ferrer, Omar-
dc.date.accessioned2014-11-24T12:28:30Z-
dc.date.available2014-11-24T12:28:30Z-
dc.date.issued2014-07-
dc.identifier.urihttp://hdl.handle.net/2445/59961-
dc.descriptionMàster Oficial en Física Avançada, Facultat de Física, Universitat de Barcelona, Curs: 2014, Tutors: Olga Casals i Albert Cireraca
dc.description.abstractMOS structures have been inkjet printed using silver, hafnium oxide (HfO2) and reduced graphene oxide (rGO). Main drawbacks with inkjet printing and electrospray deposition have been overcome. C-V characteristics of these devices have been measured and common phenomenology has been established. Deviations from known theory as well as technical improvement have been proposed.ca
dc.format.extent7 p.-
dc.format.mimetypeapplication/pdf-
dc.language.isoengca
dc.rightscc-by-nc-nd (c) Olmedo Ferrer, Omar, 2014-
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/-
dc.sourceMàster Oficial - Física Avançada-
dc.subject.classificationMetall-òxid-semiconductorscat
dc.subject.classificationImpressió digitalcat
dc.subject.classificationTreballs de fi de màstercat
dc.subject.otherMetal oxide semiconductorseng
dc.subject.otherDigital printingeng
dc.subject.otherMaster's theseseng
dc.titleInkjet printing of flexible MOS structures based on graphene and high-k dielectricseng
dc.typeinfo:eu-repo/semantics/masterThesisca
dc.rights.accessRightsinfo:eu-repo/semantics/openAccessca
Appears in Collections:Màster Oficial - Física Avançada

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