Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/67090
Title: Influence of In and Ga additives onto SnO2 inkjet-printed semiconductor
Author: Vilà i Arbonès, Anna Maria
Gómez, A.
Portilla, L.
Morante i Lleonart, Joan Ramon
Keywords: Indi (Metall)
Gal·li
Pel·lícules fines
Transistors
Semiconductors
Indium
Gallium
Thin films
Transistors
Semiconductors
Issue Date: 28-Feb-2014
Publisher: Elsevier B.V.
Abstract: Tin oxide is a multifunctional semiconductor that offers excellent capabilities in a variety of applications such as solar cells, catalysis and chemical sensors. In this work, tin-based semiconductors have been obtained by means of solution synthesis and inkjet, and compared to similar materials with In and Ga as additives. The effect of different thermal treatments after deposition is also studied. n-Type behavior with saturation mobility N2 cm2 /Vs has been observed, and suitability as a semiconductor for thin-film transistors (TFTs) demonstrated with on/off ratios of more than 8 decades. Both In and In<br>Ga additives are shown to provide superior environmental stability, as well as significant change from depletion to enhancement operation modes in TFTs.
Note: Versió postprint del document publicat a: http://dx.doi.org/10.1016/j.tsf2013.12.044
It is part of: Thin Solid Films, 2014, vol. 553, p. 118-122
Related resource: http://dx.doi.org/10.1016/j.tsf2013.12.044
URI: http://hdl.handle.net/2445/67090
ISSN: 0040-6090
Appears in Collections:Articles publicats en revistes (Electrònica)

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