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http://hdl.handle.net/2445/67090| Title: | Influence of In and Ga additives onto SnO2 inkjet-printed semiconductor |
| Author: | Vilà i Arbonès, Anna Maria Gómez, A. Portilla, L. Morante i Lleonart, Joan Ramon |
| Keywords: | Indi (Metall) Gal·li Pel·lícules fines Transistors Semiconductors Indium Gallium Thin films Transistors Semiconductors |
| Issue Date: | 28-Feb-2014 |
| Publisher: | Elsevier B.V. |
| Abstract: | Tin oxide is a multifunctional semiconductor that offers excellent capabilities in a variety of applications such as solar cells, catalysis and chemical sensors. In this work, tin-based semiconductors have been obtained by means of solution synthesis and inkjet, and compared to similar materials with In and Ga as additives. The effect of different thermal treatments after deposition is also studied. n-Type behavior with saturation mobility N2 cm2 /Vs has been observed, and suitability as a semiconductor for thin-film transistors (TFTs) demonstrated with on/off ratios of more than 8 decades. Both In and In<br>Ga additives are shown to provide superior environmental stability, as well as significant change from depletion to enhancement operation modes in TFTs. |
| Note: | Versió postprint del document publicat a: http://dx.doi.org/10.1016/j.tsf.2013.12.044 |
| It is part of: | Thin Solid Films, 2014, vol. 553, p. 118-122 |
| URI: | http://hdl.handle.net/2445/67090 |
| Related resource: | http://dx.doi.org/10.1016/j.tsf2013.12.044 |
| ISSN: | 0040-6090 |
| Appears in Collections: | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 639739.pdf | 1.41 MB | Adobe PDF | View/Open |
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