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Results 11-20 of 56 (Search time: 0.008 seconds).
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Issue DateTitleAuthor(s)
1-Aug-1998Electrically active point defects in n-type 4H¿SiCDoyle, J. P.; Linnarsson, M. K.; Pellegrino, Paolo; Keskitalo, N.; Svensson, B. G.; Schoner, A.; Nordell, N.; Lindstrom, J. L.
15-May-1996Optical response of Cu3Ge thin filmsAboelfotoh, M. O.; Guizzetti, G.; Marabelli, F.; Pellegrino, Paolo; Sassella, A.
15-Aug-1995Electron capture and emission by the Ti acceptor level in GaPRoura Grabulosa, Pere; Morante i Lleonart, Joan Ramon; Guillot, G.; Bremond, G.; Ulrici, W.
1-Apr-1997Gas collisions and pressure quenching of the photoluminescence of silicon nanopowder grown by plasma-enhanced chemical vapor depositionRoura Grabulosa, Pere; Costa i Balanzat, Josep; Morante i Lleonart, Joan Ramon; Bertrán Serra, Enric
1-Jul-1997Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layersRoura Grabulosa, Pere; Vilà i Arbonès, Anna Maria; Bosch Estrada, José; López de Miguel, Manuel; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon; Westwood, David I.
15-Oct-1997Raman microstructural analysis of silicon-on-insulator formed by high dose oxygen ion implantation: As-implanted structuresMacía Santamaría, Javier; Martín, E.; Pérez Rodríguez, Alejandro; Jiménez, J.; Morante i Lleonart, Joan Ramon; Aspar, Bernard; Margail, Jacques
15-May-1997Determination of the direct band-gap energy of InAlAs matched to InP by photoluminescence excitation spectroscopyRoura Grabulosa, Pere; López de Miguel, Manuel; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon
1-May-1997Raman scattering of InSb quantum dots grown on InP substratesArmelles Reig, G.; Utzmeier, Thomas; Postigo Resa, Pablo Aitor; Briones Fernández-Pola, Fernando; Ferrer, J. C.; Peiró Martínez, Francisca; Cornet i Calveras, Albert
15-Jul-1999Effects of the epitaxial layer thickness on the noise properties of Schottky barrier diodesGomila Lluch, Gabriel; Bulashenko, Oleg
15-Jul-1994Frequency resolved admittance spectroscopy measurements on In0.52Al0.48As/InxGa1¿xAs/In0.52Al0.48As single quantum well structuresMarsal Garví, Lluís F. (Lluís Francesc); López Villegas, José María; Bosch Estrada, José; Morante i Lleonart, Joan Ramon