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Results 21-30 of 56 (Search time: 0.008 seconds).
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Issue DateTitleAuthor(s)
15-May-1995Partial and perfect dislocation nucleation at the onset of stress relaxation in In0.60Ga0.40As active layers of high mobility transistors grown on InPPeiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon
1-Apr-1995Strain, alloy composition, and lattice relaxation measured by optical-absorption spectroscopyClark, S. A.; Roura Grabulosa, Pere; Bosch Estrada, José; Pérez Rodríguez, Alejandro; Morante i Lleonart, Joan Ramon; Westwood, David I.; Williams, R. H.
1-Jul-1993Influence of mismatch on the defects in relaxed epitaxial InGaAs/GaAs(100) films grown by molecular beam epitaxyWestwood, David I.; Woolf, D. A.; Vilà i Arbonès, Anna Maria; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon
1-Jul-1994Electrical transport quantum effects in the In0.53Ga0.47As/In0.52Al0.48As heterostructure on siliconGeorgakilas, Alexander; Christou, Aris; Zekentes, Konstantinos; Mercy, J. M.; Konczewic, L. K.; Vilà i Arbonès, Anna Maria; Cornet i Calveras, Albert
15-Apr-1995Analysis by optical absorption and transmission electron microscopy of the strain inhomogeneities in InGaAs/InP strained layersRoura Grabulosa, Pere; Clark, S. A.; Bosch Estrada, José; Peiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon
15-Feb-1997Analysis of geometrical effects on the behavior of transverse and longitudinal modes of amorphous silicon compoundsMoreno, J. A.; Garrido Fernández, Blas; Samitier i Martí, Josep; Morante i Lleonart, Joan Ramon
1-May-1996Ion-beam synthesis of amorphous SiC films: Structural analysis and recrystallizationSerre, Christophe; Calvo Barrio, Lorenzo; Pérez Rodríguez, Alejandro; Romano Rodríguez, Alberto; Morante i Lleonart, Joan Ramon; Pacaud, Y.; Kögler, Reinhard; Heera, Viton; Skorupa, Wolfgang
15-Jan-1996Structure of 60° dislocations at the GaAs/Si interfaceVilà i Arbonès, Anna Maria; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon; Ruterana, Pierre; Loubradou, Marc; Bonnet, Roland
15-Nov-1996Effect of stress and composition on the Raman spectra of etch-stop SiGeB layersPérez Rodríguez, Alejandro; Romano Rodríguez, Alberto; Cabezas, R.; Morante i Lleonart, Joan Ramon; Jawhari, Tariq; Hunt, Charles E.
1992X-ray photoelectron spectroscopy analysis of ion¿beam¿induced oxidation of GaAs and AlGaAsAlay, Josep Lluís; Vandervorst, Wilfried