Search


Current filters:
Start a new search
Add filters:

Use filters to refine the search results.


Results 21-30 of 56 (Search time: 0.044 seconds).
Item hits:
Issue DateTitleAuthor(s)
15-Apr-1995Analysis by optical absorption and transmission electron microscopy of the strain inhomogeneities in InGaAs/InP strained layersRoura Grabulosa, Pere; Clark, S. A.; Bosch Estrada, José; Peiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon
1997Síntesis de capas de SiC en substrato de Si mediante implantación iónicaPérez, A.; Romano Rodríguez, Alberto; Serre, Christophe; Calvo Barrio, Lorenzo; Cabezas, R.; Morante i Lleonart, Joan Ramon
1997Fotoluminiscencia visible debida a capas de SiO2. implantadas con silicio y carbonoLópez de Miguel, Manuel; Ferré, S.; Pérez-Rodríguez, A.; Ruterana, P.; Morante i Lleonart, Joan Ramon; Garrido Fernández, Blas
1992Micro-Raman study of stress distribution in local isolation structures and correlation with transmission electron microscopyDe Wolf, I.; Vanhellemont, J.; Romano Rodríguez, Alberto; Norström, H.; Maes, H.E.
15-Jan-1996Structure of 60° dislocations at the GaAs/Si interfaceVilà i Arbonès, Anna Maria; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon; Ruterana, Pierre; Loubradou, Marc; Bonnet, Roland
1-Aug-1998Electrically active point defects in n-type 4H¿SiCDoyle, J. P.; Linnarsson, M. K.; Pellegrino, Paolo; Keskitalo, N.; Svensson, B. G.; Schoner, A.; Nordell, N.; Lindstrom, J. L.
15-May-1990Characterization of the EL2 center in GaAs by optical admittance spectroscopyDueñas Carazo, Salvador; Castán Lanaspa, María Elena; Dios, Agustín de; Bailón Vega, Luis A.; Barbolla Sancho, Juan; Pérez Rodríguez, Alejandro
15-Nov-1996Effect of stress and composition on the Raman spectra of etch-stop SiGeB layersPérez Rodríguez, Alejandro; Romano Rodríguez, Alberto; Cabezas, R.; Morante i Lleonart, Joan Ramon; Jawhari, Tariq; Hunt, Charles E.
1-Oct-1996Competitive evolution of the fine contrast modulation and CuPt ordering in InGaP/GaAs layersDiéguez Barrientos, Àngel; Peiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon; Alsina, F.; Pascual Gainza, Jordi
15-May-1995Partial and perfect dislocation nucleation at the onset of stress relaxation in In0.60Ga0.40As active layers of high mobility transistors grown on InPPeiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon