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| Issue Date | Title | Author(s) |
|---|---|---|
| 1-Apr-1995 | Strain, alloy composition, and lattice relaxation measured by optical-absorption spectroscopy | Clark, S. A.; Roura Grabulosa, Pere; Bosch Estrada, José; Pérez Rodríguez, Alejandro; Morante i Lleonart, Joan Ramon; Westwood, David I.; Williams, R. H. |
| 1-Jul-1994 | Electrical transport quantum effects in the In0.53Ga0.47As/In0.52Al0.48As heterostructure on silicon | Georgakilas, Alexander; Christou, Aris; Zekentes, Konstantinos; Mercy, J. M.; Konczewic, L. K.; Vilà i Arbonès, Anna Maria; Cornet i Calveras, Albert |
| 15-Apr-1995 | Analysis by optical absorption and transmission electron microscopy of the strain inhomogeneities in InGaAs/InP strained layers | Roura Grabulosa, Pere; Clark, S. A.; Bosch Estrada, José; Peiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon |
| 15-Jul-1999 | Effects of the epitaxial layer thickness on the noise properties of Schottky barrier diodes | Gomila Lluch, Gabriel; Bulashenko, Oleg |
| 15-May-1990 | Characterization of the EL2 center in GaAs by optical admittance spectroscopy | Dueñas Carazo, Salvador; Castán Lanaspa, María Elena; Dios, Agustín de; Bailón Vega, Luis A.; Barbolla Sancho, Juan; Pérez Rodríguez, Alejandro |
| 1-Jul-1993 | Influence of mismatch on the defects in relaxed epitaxial InGaAs/GaAs(100) films grown by molecular beam epitaxy | Westwood, David I.; Woolf, D. A.; Vilà i Arbonès, Anna Maria; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon |
| 15-Jul-1994 | Frequency resolved admittance spectroscopy measurements on In0.52Al0.48As/InxGa1¿xAs/In0.52Al0.48As single quantum well structures | Marsal Garví, Lluís F. (Lluís Francesc); López Villegas, José María; Bosch Estrada, José; Morante i Lleonart, Joan Ramon |
| 15-May-1995 | Partial and perfect dislocation nucleation at the onset of stress relaxation in In0.60Ga0.40As active layers of high mobility transistors grown on InP | Peiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon |
| 1-Apr-1997 | Gas collisions and pressure quenching of the photoluminescence of silicon nanopowder grown by plasma-enhanced chemical vapor deposition | Roura Grabulosa, Pere; Costa i Balanzat, Josep; Morante i Lleonart, Joan Ramon; Bertrán Serra, Enric |
| 1997 | Stationary states and phase diagram for a model of the Gunn effect under realistic boundary conditions | Gomila Lluch, Gabriel; Rubí Capaceti, José Miguel; Rodríguez Cantalapiedra, Inma; Bonilla, L. L. (Luis López), 1956- |
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