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Issue DateTitleAuthor(s)
15-Aug-1995Electron capture and emission by the Ti acceptor level in GaPRoura Grabulosa, Pere; Morante i Lleonart, Joan Ramon; Guillot, G.; Bremond, G.; Ulrici, W.
15-May-1995Partial and perfect dislocation nucleation at the onset of stress relaxation in In0.60Ga0.40As active layers of high mobility transistors grown on InPPeiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon
1-Apr-1995Strain, alloy composition, and lattice relaxation measured by optical-absorption spectroscopyClark, S. A.; Roura Grabulosa, Pere; Bosch Estrada, José; Pérez Rodríguez, Alejandro; Morante i Lleonart, Joan Ramon; Westwood, David I.; Williams, R. H.
15-Apr-1995Analysis by optical absorption and transmission electron microscopy of the strain inhomogeneities in InGaAs/InP strained layersRoura Grabulosa, Pere; Clark, S. A.; Bosch Estrada, José; Peiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon
1-Apr-1995Spectroscopic characterization of phases formed by high-dose carbon ion implantation in siliconSerre, Christophe; Pérez Rodríguez, Alejandro; Romano Rodríguez, Alberto; Morante i Lleonart, Joan Ramon; Kögler, Reinhard; Skorupa, Wolfgang