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| Issue Date | Title | Author(s) |
|---|---|---|
| 1-Aug-1998 | Electrically active point defects in n-type 4H¿SiC | Doyle, J. P.; Linnarsson, M. K.; Pellegrino, Paolo; Keskitalo, N.; Svensson, Bengt G.; Schoner, A.; Nordell, N.; Lindstrom, J. L. |
| 15-Aug-1995 | Electron capture and emission by the Ti acceptor level in GaP | Roura Grabulosa, Pere; Morante i Lleonart, Joan Ramon; Guillot, G.; Bremond, G.; Ulrici, W. |
| 1992 | Anomalous optical and electrical recovery process of photoquenched EL2 defect produced by oxygen and boron ion implantation in gallium arsenide | Samitier i Martí, Josep; Marco Colás, Santiago; Pérez Rodríguez, Alejandro; Morante i Lleonart, Joan Ramon; Boher, P.; Renaud, M. |
| 1991 | Raman scattering and photoluminescence analysis of silicon on insulator structures obtained by single and multiple oxygen implants | Pérez Rodríguez, Alejandro; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon; Jiménez, J.; Hemment, Peter L. F.; Homewood, K. P. |
| 1991 | On the artificial creation of the EL2 center by means of boron implantation in gallium arsenide | Morante i Lleonart, Joan Ramon; Pérez Rodríguez, Alejandro; Samitier i Martí, Josep; Romano Rodríguez, Albert |
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