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| Issue Date | Title | Author(s) |
|---|---|---|
| 15-Aug-1995 | Electron capture and emission by the Ti acceptor level in GaP | Roura Grabulosa, Pere; Morante i Lleonart, Joan Ramon; Guillot, G.; Bremond, G.; Ulrici, W. |
| 1-Jul-1997 | Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layers | Roura Grabulosa, Pere; Vilà i Arbonès, Anna Maria; Bosch Estrada, José; López de Miguel, Manuel; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon; Westwood, David I. |
| 15-May-1997 | Determination of the direct band-gap energy of InAlAs matched to InP by photoluminescence excitation spectroscopy | Roura Grabulosa, Pere; López de Miguel, Manuel; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon |
| 1-Apr-1995 | Strain, alloy composition, and lattice relaxation measured by optical-absorption spectroscopy | Clark, S. A.; Roura Grabulosa, Pere; Bosch Estrada, José; Pérez Rodríguez, Alejandro; Morante i Lleonart, Joan Ramon; Westwood, David I.; Williams, R. H. |
| 15-Apr-1995 | Analysis by optical absorption and transmission electron microscopy of the strain inhomogeneities in InGaAs/InP strained layers | Roura Grabulosa, Pere; Clark, S. A.; Bosch Estrada, José; Peiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon |
| 1-Apr-1997 | Gas collisions and pressure quenching of the photoluminescence of silicon nanopowder grown by plasma-enhanced chemical vapor deposition | Roura Grabulosa, Pere; Costa i Balanzat, Josep; Morante i Lleonart, Joan Ramon; Bertrán Serra, Enric |
| 1992 | Composition modulation and inhomogeneous strain field in InxGa1-xAs/InP strained layers | Roura Grabulosa, Pere; Bosch Estrada, José; Morante i Lleonart, Joan Ramon |
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