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| Issue Date | Title | Author(s) |
|---|---|---|
| 15-May-1997 | Determination of the direct band-gap energy of InAlAs matched to InP by photoluminescence excitation spectroscopy | Roura Grabulosa, Pere; López de Miguel, Manuel; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon |
| 15-Jan-1996 | Structure of 60° dislocations at the GaAs/Si interface | Vilà i Arbonès, Anna Maria; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon; Ruterana, Pierre; Loubradou, Marc; Bonnet, Roland |
| 15-May-1995 | Partial and perfect dislocation nucleation at the onset of stress relaxation in In0.60Ga0.40As active layers of high mobility transistors grown on InP | Peiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon |
| 1992 | Alloy inhomogeneities in InAlAs strained layers grown by MBE | Peiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon; Clark, S. A.; Williams, R. H. |
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