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| Issue Date | Title | Author(s) |
|---|---|---|
| 1-Jun-1998 | Effects of prior hydrogenation on the structure and properties of thermally nanocrystallized silicon layers | Achiq, Abdellatif; Rizk, Richard; Gourbilleau, Fabrice; Madelon, R.; Garrido Fernández, Blas; Pérez Rodríguez, Alejandro; Morante i Lleonart, Joan Ramon |
| 1-May-1996 | Ion-beam synthesis of amorphous SiC films: Structural analysis and recrystallization | Serre, Christophe; Calvo Barrio, Lorenzo; Pérez Rodríguez, Alejandro; Romano Rodríguez, Albert; Morante i Lleonart, Joan Ramon; Pacaud, Y.; Kögler, Reinhard; Heera, Viton; Skorupa, Wolfgang |
| 15-Oct-1997 | Raman microstructural analysis of silicon-on-insulator formed by high dose oxygen ion implantation: As-implanted structures | Macía Santamaría, Javier; Martín, E.; Pérez Rodríguez, Alejandro; Jiménez, J.; Morante i Lleonart, Joan Ramon; Aspar, Bernard; Margail, Jacques |
| 15-Nov-1996 | Effect of stress and composition on the Raman spectra of etch-stop SiGeB layers | Pérez Rodríguez, Alejandro; Romano Rodríguez, Albert; Cabezas, R.; Morante i Lleonart, Joan Ramon; Jawhari, Tariq; Hunt, Charles E. |
| 1-Apr-1995 | Spectroscopic characterization of phases formed by high-dose carbon ion implantation in silicon | Serre, Christophe; Pérez Rodríguez, Alejandro; Romano Rodríguez, Albert; Morante i Lleonart, Joan Ramon; Kögler, Reinhard; Skorupa, Wolfgang |
| 1-Apr-1995 | Strain, alloy composition, and lattice relaxation measured by optical-absorption spectroscopy | Clark, S. A.; Roura Grabulosa, Pere; Bosch Estrada, José; Pérez Rodríguez, Alejandro; Morante i Lleonart, Joan Ramon; Westwood, David I.; Williams, R. H. |
| 15-May-1990 | Characterization of the EL2 center in GaAs by optical admittance spectroscopy | Dueñas Carazo, Salvador; Castán Lanaspa, María Elena; Dios, Agustín de; Bailón Vega, Luis A.; Barbolla Sancho, Juan; Pérez Rodríguez, Alejandro |
| 1992 | Anomalous optical and electrical recovery process of photoquenched EL2 defect produced by oxygen and boron ion implantation in gallium arsenide | Samitier i Martí, Josep; Marco Colás, Santiago; Pérez Rodríguez, Alejandro; Morante i Lleonart, Joan Ramon; Boher, P.; Renaud, M. |
| 1991 | Raman scattering and photoluminescence analysis of silicon on insulator structures obtained by single and multiple oxygen implants | Pérez Rodríguez, Alejandro; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon; Jiménez, J.; Hemment, Peter L. F.; Homewood, K. P. |
| 1991 | On the artificial creation of the EL2 center by means of boron implantation in gallium arsenide | Morante i Lleonart, Joan Ramon; Pérez Rodríguez, Alejandro; Samitier i Martí, Josep; Romano Rodríguez, Albert |
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