Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/8584
Title: Improved equivalent circuit and analytical model for amorphous silicon solar cells and modules
Author: Merten, Jens
Asensi López, José Miguel
Voz Sánchez, Cristóbal
Shah, A. V.
Platz, R.
Andreu i Batallé, Jordi
Keywords: Amorphous silicon solar cells and modules
Semiconductors amorfs
Hidrogen
Silicones
Cèl.lules solars
Semiconductors
Amorphous semiconductors
Electron-hole recombination
Elemental semiconductors
Equivalent circuits
Hydrogen
Losses
Semiconductor device models
Silicon
Solar cells
Issue Date: 1998
Publisher: IEEE
Abstract: An improved equivalent circuit for hydrogenated amorphous silicon (a-Si:H) solar cells and modules is presented. It is based on the classic combination of a diode with an exponential current-voltage characteristic, of a photocurrent source plus a new term representing additional recombination losses in the i-layer of the device. This model/equivalent circuit matches the I(V) curves of a-Si:H cells over an illumination range of six orders of magnitude. The model clearly separates effects related to the technology of the device (series and parallel resistance) and effects related to the physics of the p-i-n junction (recombination losses). It also allows an effective /spl mu//spl tau/ product in the i-layer of the device to be determined, characterizing its state of degradation.
Note: Reproducció del document publicat a http://dx.doi.org/10.1109/16.658676
It is part of: IEEE Transactions on Electron Devices, 1998, vol. 45, núm. 2, p. 423-429.
Related resource: http://dx.doi.org/10.1109/16.658676
URI: http://hdl.handle.net/2445/8584
ISSN: 0018-9383
Appears in Collections:Articles publicats en revistes (Física Aplicada)

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