Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/8722
Title: Hydrogen-induced piezoelectric effects in InP HEMT's
Author: Blanchard, Roxann R.
Alamo, Jesús A. del
Adams, Stephen B.
Chao, P. C.
Cornet i Calveras, Albert
Keywords: Piroelectricitat i piezoelectricitat
Hidrogenació
Hydrogenation
Piezoelectricity
Semiconductor device
InP HEMT's
Issue Date: 1999
Publisher: IEEE
Abstract: In this letter, we have investigated hydrogen degradation of InP HEMT's with Ti/Pt/Au gates. We have found that V/sub T/ shifts negative after exposure to hydrogen, and exhibits an L/sub G/ and orientation dependence. We postulate that /spl Delta/V/sub T/ is at least in part due to the piezoelectric effect. Hydrogen exposure leads to the formation of TiH/sub x/, producing compressive stress in the gate. This stress induces a piezoelectric charge distribution in the semiconductor that shifts the threshold voltage. We have independently confirmed TiH/sub x/ formation under our experimental conditions through Auger measurements. Separate radius-of-curvature measurements have also independently confirmed that Ti/Pt films become compressively stressed relative to their initial state after H/sub 2/ exposure.
Note: Reproducció del document publicat a http://dx.doi.org/10.1109/55.778153
It is part of: IEEE Electron Device Letters, 1999, vol. 20, núm. 8, p. 393-395.
Related resource: http://dx.doi.org/10.1109/55.778153
URI: http://hdl.handle.net/2445/8722
ISSN: 0741-3106
Appears in Collections:Articles publicats en revistes (Electrònica)

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