Please use this identifier to cite or link to this item:
|Title:||Hydrogen-induced piezoelectric effects in InP HEMT's|
|Author:||Blanchard, Roxann R.|
Alamo, Jesús A. del
Adams, Stephen B.
Chao, P. C.
Cornet i Calveras, Albert
|Keywords:||Piroelectricitat i piezoelectricitat|
|Abstract:||In this letter, we have investigated hydrogen degradation of InP HEMT's with Ti/Pt/Au gates. We have found that V/sub T/ shifts negative after exposure to hydrogen, and exhibits an L/sub G/ and orientation dependence. We postulate that /spl Delta/V/sub T/ is at least in part due to the piezoelectric effect. Hydrogen exposure leads to the formation of TiH/sub x/, producing compressive stress in the gate. This stress induces a piezoelectric charge distribution in the semiconductor that shifts the threshold voltage. We have independently confirmed TiH/sub x/ formation under our experimental conditions through Auger measurements. Separate radius-of-curvature measurements have also independently confirmed that Ti/Pt films become compressively stressed relative to their initial state after H/sub 2/ exposure.|
|Note:||Reproducció del document publicat a http://dx.doi.org/10.1109/55.778153|
|It is part of:||IEEE Electron Device Letters, 1999, vol. 20, núm. 8, p. 393-395.|
|Appears in Collections:||Articles publicats en revistes (Electrònica)|
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.