Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/8749
Title: Hydrogen-induced changes in the breakdown voltage of InP HEMTs
Author: Blanchard, Roxann R.
Alamo, Jesús A. del
Cornet i Calveras, Albert
Keywords: Hidrogen
Espectroscòpia de raigs X
Transistors
Hall mobility
III-V semiconductors
X-ray spectroscopy
Failure analysis
High electron mobility
Transistors
Hydrogen
Indium compounds
Semiconductor device breakdown
Issue Date: 2005
Publisher: IEEE
Abstract: In this work, electrical measurements show that the breakdown voltage,BVDG, of InP HEMTs increases following exposure to H2. This BVDG shift is nonrecoverable. The increase in BVDG is found to be due to a decrease in the carrier concentration in the extrinsic portion of the device.We provide evidence that H2 reacts with the exposed InAlAs surface in the extrinsic region next to the gate, changing the underlying carrier concentration. Hall measurements of capped and uncapped HEMT samples show that the decrease in sheet carrier concentration can be attributed to a modification of the exposed InAlAs surface. Consistent with this, XPS experiments on uncapped heterostructures give evidence of As loss from the InAlAs surface upon exposure to hydrogen.
Note: Reproducció del document publicat a http://dx.doi.org/10.1109/TDMR.2005.846825
It is part of: IEEE Transactions On Device And Materials Reliability, 2005, vol. 5, núm. 2, p. 231-234.
URI: http://hdl.handle.net/2445/8749
ISSN: 1530-4388
Appears in Collections:Articles publicats en revistes (Electrònica)

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