Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/8757
Title: Er-Coupled Si Nanocluster Waveguide
Author: Daldosso, Nicola
Navarro Urrios, Daniel
Melchiorri, Mirko
García Favrot, Cristina
Pellegrino, Paolo
Garrido Fernández, Blas
Sada, Cinzia
Battaglin, Giancarlo
Gourbilleau, Fabrice
Rizk, Richard
Pavesi, Lorenzo
Keywords: Guies d'ones
Materials nanoestructurats
Er amplifier
Si nanocluster
Silicon photonics
Waveguides
Issue Date: 2006
Publisher: IEEE
Abstract: Rib-loaded waveguides containing Er3+-coupled Si nanoclusters (Si-nc) have been produced to observe optical gain at 1535 nm. The presence ofSi-nc strongly improves the efficiency ofEr 3+ excitation but may introduce optical loss mechanisms, such as Mie scattering and confined carrier absorption. Losses strongly affect the possibility of obtaining positive optical gain. Si-nc-related losses have been minimized to 1 dB/cm by lowering the annealing time ofthe Er3+-doped silicon-rich oxide deposited by reactive magnetron cosputtering. Photoluminescence (PL) and lifetime measurements show that all Er3+ ions are optically active while those that can be excited at high pump rates via Si-nc are only a small percentage. Er3+ absorption cross section is found comparable to that ofEr 3+ in SiO 2.However, dependence on the effective refractive index has been found. In pump-probe measurements, it is shown how the detrimental role ofconfined carrier absorption can be attenuated by reducing the annealing time. A maximum signal enhancement ofabout 1.34 at 1535 nm was measured.
Note: Reproducció del document publicat a http://dx.doi.org/10.1109/JSTQE.2006.885141
It is part of: IEEE Journal of Selected Topics in Quantum Electronics, 2006, vol. 12, núm. 6 (Part 2), p. 1607-1617
URI: http://hdl.handle.net/2445/8757
ISSN: 1077-260X
Appears in Collections:Articles publicats en revistes (Electrònica)

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