Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/8760
Title: Gallium-Indium-Zinc-Oxide-Based Thin-Film Transistors: Influence of the Source/Drain Material
Author: Barquinha, Pedro M. C.
Vilà i Arbonès, Anna Maria
Gonçalves, Gonçalo
Pereira, Luís M. N.
Martins, Rodrigo F. P.
Morante i Lleonart, Joan Ramon
Fortunato, Elvira M. C.
Keywords: Espectrometria de masses
Semiconductors amorfs
Annealing
Secondary ion mass spectroscopy
Thin film transistors
Time of flight
Mass spectrometers
Issue Date: 2008
Publisher: IEEE
Note: Reproducció del document publicat a http://dx.doi.org/10.1109/TED.2008.916717
It is part of: IEEE Transactions on Electron Devices, 2008, vol. 55, núm. 4, p. 954-960.
URI: http://hdl.handle.net/2445/8760
ISSN: 0018-9383
Appears in Collections:Articles publicats en revistes (Electrònica)

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