Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/8760
Title: Gallium-Indium-Zinc-Oxide-Based Thin-Film Transistors: Influence of the Source/Drain Material
Author: Barquinha, Pedro M. C.
Vilà i Arbonès, Anna Maria
Gonçalves, Gonçalo
Pereira, Luís M. N.
Martins, Rodrigo F. P.
Morante i Lleonart, Joan Ramon
Fortunato, Elvira M. C.
Keywords: Espectrometria de masses
Semiconductors amorfs
Annealing
Secondary ion mass spectroscopy
Thin film transistors
Time of flight
Mass spectrometers
Issue Date: 2008
Publisher: IEEE
Abstract: During the last years, oxide semiconductors have shown that they will have a key role in the future of electronics. In fact, several research groups have already presented working devices with remarkable electrical and optical properties based on these materials, mainly thin-film transistors (TFTs). Most of these TFTs use indium-tin oxide (ITO) as the material for source/drain electrodes. This paper focuses on the investigation of different materials to replace ITO in inverted-staggered TFTs based on gallium-indium-zinc oxide (GIZO) semiconductor. The analyzed electrode materials were indium-zinc oxide, Ti, Al, Mo, and Ti/Au, with each of these materials used in two different kinds of devices: one was annealed after GIZO channel deposition but prior to source/drain deposition, and the other was annealed at the end of device production. The results show an improvement on the electrical properties when the annealing is performed at the end (for instance, with Ti/Au electrodes, mobility rises from 19 to 25 cm 2 /V ldr s, and turn-on voltage drops from 4 to 2 V). Using time-of-flight secondary ion mass spectrometry (TOF-SIMS), we could confirm that some diffusion exists in the source/drain electrodes/semiconductor interface, which is in close agreement with the obtained electrical properties. In addition to TOF-SIMS results for relevant elements, electrical characterization is presented for each kind of device, including the extraction of source/drain series resistances and TFT intrinsic parameters, such as (intrinsic mobility) and VT i (intrinsic threshold voltage).
Note: Reproducció del document publicat a http://dx.doi.org/10.1109/TED.2008.916717
It is part of: IEEE Transactions on Electron Devices, 2008, vol. 55, núm. 4, p. 954-960.
Related resource: http://dx.doi.org/10.1109/TED.2008.916717
URI: http://hdl.handle.net/2445/8760
ISSN: 0018-9383
Appears in Collections:Articles publicats en revistes (Electrònica)

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